Microsemi Corp. Bipolar Transistors - BJT Jan2N6987/TR

Quad PNP silicon switching transistor array in a 20-lead leadless package, qualified per MIL-PRF-19500/558 for JAN, JANTX, JANTXV, and JANS levels. Each transistor has a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 1.5 W for the 2N6987 variant. Operating and storage junction temperature range is -65 to +200 °C. Forward current transfer ratio ranges from 50 to 450 depending on collector current. Collector-emitter saturation voltage is 0.4 V at 150 mA collector current and 15 mA base current. Input capacitance is 30 pF, output capacitance is 8.0 pF.