Manufacturer: Microsemi Corporation
Win Source Part Number: 153130-JAN2N6849
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-39
Dimension: TO-205AF Metal Can
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 6.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 34.8nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 320 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MOSFET P-CH 100V 6.5A TO39
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 153130-JAN2N6849 | JAN2N6849 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6849 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | |
| V(BR)DSS | 100 volts | |
| PD | 800 to 25000 milliwatts |
