Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6800 JAN2N6800

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 137193-JAN2N6800 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 800mW (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-39 Dimension: TO-205AF Metal Can Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 34.75nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.1 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6800 - 137193-JAN2N6800 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - JAN2N6800 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 137193-JAN2N6800 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 800mW (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-39 Dimension: TO-205AF Metal Can Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 34.75nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.1 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6800 - 137193-JAN2N6800 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6800
137193-JAN2N6800
TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6800 137193-JAN2N6800
Manufacturer: Microsemi Corporation Win Source Part Number: 137193-JAN2N6800 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 800mW (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-39 Dimension: TO-205AF Metal Can Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 34.75nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.1 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 137193-JAN2N6800
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-39
Dimension: TO-205AF Metal Can
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 34.75nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.1 Ohm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - JAN2N6800 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
JAN2N6800
Discrete Semiconductor Products - Transistors - FETs, MOSFETs JAN2N6800
MOSFET N-CH 400V 3A TO39

MOSFET N-CH 400V 3A TO39

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 137193-JAN2N6800 JAN2N6800
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6800 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 400 volts
PD 800 to 25000 milliwatts
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