Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6796 JAN2N6796

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 762313-JAN2N6796 Series: Military, MIL-PRF-19500/557 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-205AF Metal Can Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Part Status: Obsolete(EOL) Family Name: 2N6796 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-39 Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 28.51nC @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 800mW (Ta), 25W (Tc) Rds On (Maximum) @ Id, Vgs: 195 mOhm @ 8A, 10V Alternative Parts (Cross-Reference): JANSR2N7272; IRFF130-JQR-B; IRFF130; ; Introduction Date: September 17, 2008 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: Obsolete Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 762313-JAN2N6796 Series: Military, MIL-PRF-19500/557 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-205AF Metal Can Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Part Status: Obsolete(EOL) Family Name: 2N6796 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-39 Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 28.51nC @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 800mW (Ta), 25W (Tc) Rds On (Maximum) @ Id, Vgs: 195 mOhm @ 8A, 10V Alternative Parts (Cross-Reference): JANSR2N7272; IRFF130-JQR-B; IRFF130; ; Introduction Date: September 17, 2008 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: Obsolete Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited
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Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6796
762313-JAN2N6796
TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6796 762313-JAN2N6796
Manufacturer: Microsemi Corporation Win Source Part Number: 762313-JAN2N6796 Series: Military, MIL-PRF-19500/557 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-205AF Metal Can Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Part Status: Obsolete(EOL) Family Name: 2N6796 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-39 Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 28.51nC @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 800mW (Ta), 25W (Tc) Rds On (Maximum) @ Id, Vgs: 195 mOhm @ 8A, 10V Alternative Parts (Cross-Reference): JANSR2N7272; IRFF130-JQR-B; IRFF130; ; Introduction Date: September 17, 2008 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: Obsolete Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 762313-JAN2N6796
Series: Military, MIL-PRF-19500/557
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-205AF Metal Can
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Part Status: Obsolete(EOL)
Family Name: 2N6796
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-39
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 28.51nC @ 10V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 800mW (Ta), 25W (Tc)
Rds On (Maximum) @ Id, Vgs: 195 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): JANSR2N7272; IRFF130-JQR-B; IRFF130; ;
Introduction Date: September 17, 2008
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: Obsolete
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - JAN2N6796 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
JAN2N6796
Discrete Semiconductor Products - Transistors - FETs, MOSFETs JAN2N6796
MOSFET N-CH 100V 8A TO39

MOSFET N-CH 100V 8A TO39

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 762313-JAN2N6796 JAN2N6796
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6796 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 800 to 25000 milliwatts
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