Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6788 JAN2N6788

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 153128-JAN2N6788 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 800mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-39 Dimension: TO-205AF Metal Can Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 350 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Quantity per package: 1
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6788 - 153128-JAN2N6788 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - JAN2N6788 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 153128-JAN2N6788 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 800mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-39 Dimension: TO-205AF Metal Can Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 350 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Quantity per package: 1
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6788 - 153128-JAN2N6788 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6788
153128-JAN2N6788
TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6788 153128-JAN2N6788
Manufacturer: Microsemi Corporation Win Source Part Number: 153128-JAN2N6788 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 800mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-39 Dimension: TO-205AF Metal Can Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 350 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 153128-JAN2N6788
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 800mW (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-39
Dimension: TO-205AF Metal Can
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 350 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Quantity per package: 1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - JAN2N6788 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
JAN2N6788
Discrete Semiconductor Products - Transistors - FETs, MOSFETs JAN2N6788
MOSFET N-CH 100V 6A TO39

MOSFET N-CH 100V 6A TO39

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 153128-JAN2N6788 JAN2N6788
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6788 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
PD 800 milliwatts
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