Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6766 JAN2N6766

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 762311-JAN2N6766 Series: Military, MIL-PRF-19500/543 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-204AE Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Part Status: Obsolete(EOL) Family Name: 2N6766 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-3 Channel Type Type: N Drain Source Voltage: 200V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 115nC @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 4W (Ta), 150W (Tc) Rds On (Maximum) @ Id, Vgs: 90 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): IRF250PBF; IRF250; 2N6766PBF; ; Introduction Date: October 05, 2010 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: Obsolete Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 762311-JAN2N6766 Series: Military, MIL-PRF-19500/543 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-204AE Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Part Status: Obsolete(EOL) Family Name: 2N6766 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-3 Channel Type Type: N Drain Source Voltage: 200V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 115nC @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 4W (Ta), 150W (Tc) Rds On (Maximum) @ Id, Vgs: 90 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): IRF250PBF; IRF250; 2N6766PBF; ; Introduction Date: October 05, 2010 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: Obsolete Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6766 - 762311-JAN2N6766 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6766
762311-JAN2N6766
TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6766 762311-JAN2N6766
Manufacturer: Microsemi Corporation Win Source Part Number: 762311-JAN2N6766 Series: Military, MIL-PRF-19500/543 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-204AE Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Part Status: Obsolete(EOL) Family Name: 2N6766 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-3 Channel Type Type: N Drain Source Voltage: 200V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 115nC @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 4W (Ta), 150W (Tc) Rds On (Maximum) @ Id, Vgs: 90 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): IRF250PBF; IRF250; 2N6766PBF; ; Introduction Date: October 05, 2010 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: Obsolete Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 762311-JAN2N6766
Series: Military, MIL-PRF-19500/543
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-204AE
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Part Status: Obsolete(EOL)
Family Name: 2N6766
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-3
Channel Type Type: N
Drain Source Voltage: 200V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 115nC @ 10V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 4W (Ta), 150W (Tc)
Rds On (Maximum) @ Id, Vgs: 90 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): IRF250PBF; IRF250; 2N6766PBF; ;
Introduction Date: October 05, 2010
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: Obsolete
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

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Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
JAN2N6766
Discrete Semiconductor Products - Transistors - FETs, MOSFETs JAN2N6766
MOSFET N-CH 200V 30A TO3

MOSFET N-CH 200V 30A TO3

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 762311-JAN2N6766 JAN2N6766
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6766 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 4000 to 150000 milliwatts
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