Manufacturer: Microsemi Corporation
Win Source Part Number: 762311-JAN2N6766
Series: Military, MIL-PRF-19500/543
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-204AE
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Part Status: Obsolete(EOL)
Family Name: 2N6766
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-3
Channel Type Type: N
Drain Source Voltage: 200V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 115nC @ 10V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 4W (Ta), 150W (Tc)
Rds On (Maximum) @ Id, Vgs: 90 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): IRF250PBF; IRF250; 2N6766PBF; ;
Introduction Date: October 05, 2010
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: Obsolete
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
MOSFET N-CH 200V 30A TO3
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 762311-JAN2N6766 | JAN2N6766 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - JAN2N6766 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 4000 to 150000 milliwatts |