Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - JAN2N6059 JAN2N6059

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 138909-JAN2N6059 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-204AA (TO-3) Maximum Current Collector: 12A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 3V @ 120mA, 12A Collector Cut-off Current(Max): 1mA Typical Gain (hFE) (Min): 1000 @ 6A, 3V Maximum Power Dissipation: 150W Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 138909-JAN2N6059 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-204AA (TO-3) Maximum Current Collector: 12A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 3V @ 120mA, 12A Collector Cut-off Current(Max): 1mA Typical Gain (hFE) (Min): 1000 @ 6A, 3V Maximum Power Dissipation: 150W Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Quantity per package: 1
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Suppliers

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TRANSISTORS - Transistors (BJT) - Single - JAN2N6059 - 138909-JAN2N6059 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - JAN2N6059
138909-JAN2N6059
TRANSISTORS - Transistors (BJT) - Single - JAN2N6059 138909-JAN2N6059
Manufacturer: Microsemi Corporation Win Source Part Number: 138909-JAN2N6059 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-204AA (TO-3) Maximum Current Collector: 12A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 3V @ 120mA, 12A Collector Cut-off Current(Max): 1mA Typical Gain (hFE) (Min): 1000 @ 6A, 3V Maximum Power Dissipation: 150W Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 138909-JAN2N6059
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-204AA (TO-3)
Maximum Current Collector: 12A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 3V @ 120mA, 12A
Collector Cut-off Current(Max): 1mA
Typical Gain (hFE) (Min): 1000 @ 6A, 3V
Maximum Power Dissipation: 150W
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 138909-JAN2N6059
Product Name TRANSISTORS - Transistors (BJT) - Single - JAN2N6059
Polarity NPN; NPN - Darlington
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