Microsemi Corp. Bipolar Transistors - BJT Jan2N5667

NPN power silicon switching transistor qualified per MIL-PRF-19500/455, available in TO-66 package. Collector-emitter voltage rated at 300 Vdc, collector-base voltage at 400 Vdc, and collector current at 5.0 Adc. Maximum power dissipation is 1.5 W at +25°C and 35 W at +100°C. Forward current transfer ratio ranges from 25 to 75 at 1.0 A collector current. Collector-emitter saturation voltage is 0.4 V at 3.0 A collector current and 0.6 A base current. Turn-off time is 2.0 μs under specified conditions. Operating and storage junction temperature range is -65°C to +200°C.