Microsemi Corp. Bipolar Transistors - BJT Jan2N5665

The Jan2N5665 is an NPN power silicon switching transistor in a TO-39 (TO-205AD) package, qualified per MIL-PRF-19500/455. It has a collector-emitter voltage rating of 300 Vdc and a collector-base voltage rating of 400 Vdc, with a collector current limit of 5.0 Adc and a power dissipation of 1.2 W at +25°C. The forward current transfer ratio ranges from 25 to 75 at 1.0 Adc collector current and 5.0 Vdc collector-emitter voltage. Collector-emitter saturation voltage is 0.4 Vdc at 3.0 Adc collector current and 0.6 Adc base current, rising to 1.0 Vdc at 5.0 Adc collector current and 1.0 Adc base current. Turn-off time is 2.0 μs under specified switching conditions. Operating and storage junction temperature ranges from -65°C to +200°C.