Microsemi Corp. Bipolar Transistors - BJT Jan2N5582/TR

NPN silicon switching transistor for high-reliability applications, qualified per MIL-PRF-19500/423 at JAN and JANTX levels, packaged in TO-206AB (TO-46) case. Maximum collector-emitter voltage is 50 Vdc, collector-base voltage is 75 Vdc, and emitter-base voltage is 6.0 Vdc. Continuous collector current is 800 mAdc, with total power dissipation of 0.5 W at 25°C. Forward current transfer ratio (hFE) ranges from 50 to 300 at collector currents up to 150 mA and 30 at 500 mA. Collector-emitter saturation voltage is 1.0 V at 500 mA collector and 50 mA base current. Switching characteristics include turn-on time of 35 µs and turn-off time of 300 µs under specified conditions. Operating and storage junction temperature range is -55°C to +200°C.