Microsemi Corp. Bipolar Transistors - BJT Jan2N4854/TR

The Jan2N4854/TR is a military-qualified NPN/PNP silicon complementary small-signal dual transistor in a 6-pin TO-78 package, designed for high-reliability applications. It has a collector-emitter voltage rating of 40 V, a collector current of 600 mA, and a junction temperature range of -65 to +200 °C. Total power dissipation is 0.60 W at +25 °C ambient temperature and 2.0 W at +25 °C case temperature. The device meets MIL-PRF-19500/421 qualification standards and is RoHS compliant for commercial grades. Thermal resistance junction-to-case is 87 °C/W, and junction-to-ambient is 290 °C/W. The case is Au over Ni plated kovar with a weight of 0.856 grams.