Microsemi Corp. Bipolar Transistors - BJT JAN2N4261UB/TR

The JAN2N4261UB/TR is a PNP silicon small-signal transistor in a ceramic surface-mount package with a metal lid, compliant with MIL-PRF-19500/511 for JAN qualification. It has a maximum collector-emitter voltage of -15 V, a collector current rating of -30 mA, and a total power dissipation of 0.2 W at 25 °C. The thermal resistance junction-to-ambient is 0.860 °C/W. The device features a forward-current transfer ratio (hFE) of 20 to 150, collector-emitter saturation voltage of -0.15 V to -0.35 V, and operating junction and storage temperatures from -65 °C to +200 °C. It is RoHS compliant and meets MIL-PRF-19500/511 reliability standards. Package dimensions are 1.17 to 1.42 mm in height and 2.92 to 3.25 mm in length, with gold-plated nickel terminals and a weight under 0.04 grams.