Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - JAN2N4239 JAN2N4239

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 135217-JAN2N4239 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-39 (TO-205AD) Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 600mV @ 100mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 30 @ 250mA, 1V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 1
  • TRANSISTORS - Transistors (BJT) - Single - JAN2N4239 - 135217-JAN2N4239 - Win Source Electronics
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 135217-JAN2N4239 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-39 (TO-205AD) Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 600mV @ 100mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 30 @ 250mA, 1V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 1
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TRANSISTORS - Transistors (BJT) - Single - JAN2N4239 - 135217-JAN2N4239 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - JAN2N4239
135217-JAN2N4239
TRANSISTORS - Transistors (BJT) - Single - JAN2N4239 135217-JAN2N4239
Manufacturer: Microsemi Corporation Win Source Part Number: 135217-JAN2N4239 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-39 (TO-205AD) Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 600mV @ 100mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 30 @ 250mA, 1V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 135217-JAN2N4239
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 200°C (TJ)
Case / Package: TO-39 (TO-205AD)
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 600mV @ 100mA, 1A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 30 @ 250mA, 1V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Sheung Wan, Hong Kong
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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors
Product Number 135217-JAN2N4239 JAN2N4239
Product Name TRANSISTORS - Transistors (BJT) - Single - JAN2N4239 Bipolar Transistors - BJT
Polarity NPN; NPN
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