Microsemi Corp. Bipolar Transistors - BJT Jan2N4033/TR

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Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT
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The Jan2N4033/TR is a PNP silicon switching transistor qualified per MIL-PRF-19500/512, housed in a TO-39 (TO-205AD) package with a collector-emitter voltage rating of 80 Vdc, collector current of 1.0 Adc, and total power dissipation of 0.8 W at +25°C. Operating and storage junction temperatures range from -65°C to +200°C, with a thermal resistance from junction to case of 40°C/W. It exhibits a forward-current transfer ratio ranging from 25 to 300 under specified test conditions, a collector-emitter saturation voltage up to 1.0 Vdc, and switching times including a rise time of 25 µs and fall time of 35 µs. The collector is internally connected to the case, and the device meets MIL-PRF-19500/512 qualification standards.

Datasheet Summary
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The Jan2N4033/TR is a PNP silicon switching transistor qualified per MIL-PRF-19500/512, housed in a TO-39 (TO-205AD) package with a collector-emitter voltage rating of 80 Vdc, collector current of 1.0 Adc, and total power dissipation of 0.8 W at +25°C. Operating and storage junction temperatures range from -65°C to +200°C, with a thermal resistance from junction to case of 40°C/W. It exhibits a forward-current transfer ratio ranging from 25 to 300 under specified test conditions, a collector-emitter saturation voltage up to 1.0 Vdc, and switching times including a rise time of 25 µs and fall time of 35 µs. The collector is internally connected to the case, and the device meets MIL-PRF-19500/512 qualification standards.

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Bipolar Transistors - BJT
Jan2N4033/TR
Bipolar Transistors - BJT Jan2N4033/TR
Bipolar Transistors - BJT

Bipolar Transistors - BJT

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number Jan2N4033/TR
Product Name Bipolar Transistors - BJT
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