Microsemi Corp. Bipolar Transistors - BJT Jan2N3810U/TR

The Jan2N3810U/TR is a PNP silicon dual transistor in a TO-78 package, designed for high-reliability applications. It has a collector-emitter voltage rating of 60 Vdc and a collector current limit of 50 mAdc. Power dissipation is 200 mW for one section or 350 mW for both at +25°C, with a junction temperature range of -65°C to +200°C. The device meets MIL-PRF-19500/336 qualification. Current gain (hFE) ranges from 100 to 450 based on bias conditions, with a collector-emitter saturation voltage of 0.2 V at 100 μA collector current. Input impedance is 3.0 to 30 kΩ and output capacitance is 5.0 pF at 5.0 Vdc. Noise figure is 3.0 dB at 1.0 kHz and 100 μA collector current. Suitable for demanding analog and switching circuits.