Microsemi Corp. Bipolar Transistors - BJT Jan2N3810L/TR

The Jan2N3810L/TR is a PNP silicon dual transistor in a TO-78 package, designed for general-purpose amplification and switching applications. It shares the absolute maximum ratings of the 2N3810 series: collector-emitter and collector-base voltage of 60 Vdc, emitter-base voltage of 5.0 Vdc, and collector current of 50 mAdc. Total power dissipation is 200 mW for one section and 350 mW for both sections at +25°C, with linear derating above that temperature. The operating and storage junction temperature range is -65°C to +200°C. Electrical characteristics include a forward-current transfer ratio (hFE) of 100 to 450 depending on bias conditions, collector-emitter saturation voltage of 0.2 Vdc at 100 μA collector current, and a small-signal short-circuit forward current transfer ratio (hfe) of 150 to 600 at 1.0 mA collector current. The device is qualified per MIL-PRF-19500/336.