Microsemi Corp. Bipolar Transistor JAN2N3740

Description
Bipolar Transistors - BJT Power BJT Product overview: JAN2N3740 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JAN2N3740 can be used for catalog matching and distributor lookup.
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Description
Bipolar Transistors - BJT Power BJT Product overview: JAN2N3740 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JAN2N3740 can be used for catalog matching and distributor lookup.
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Bipolar Transistor 2087-JAN2N3740
Bipolar Transistors - BJT Power BJT Product overview: JAN2N3740 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JAN2N3740 can be used for catalog matching and distributor lookup.

Bipolar Transistors - BJT Power BJT Product overview: JAN2N3740 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JAN2N3740 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - JAN2N3740 - 205724-JAN2N3740 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - JAN2N3740
205724-JAN2N3740
TRANSISTORS - Transistors (BJT) - Single - JAN2N3740 205724-JAN2N3740
Manufacturer: Microsemi Corporation Win Source Part Number: 205724-JAN2N3740 Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-66 (TO-213AA) Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 600mV @ 125mA, 1A Collector Cut-off Current(Max): 10μA Typical Gain (hFE) (Min): 30 @ 250mA, 1V Maximum Power Dissipation: 25W Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 205724-JAN2N3740
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 200°C (TJ)
Case / Package: TO-66 (TO-213AA)
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 600mV @ 125mA, 1A
Collector Cut-off Current(Max): 10μA
Typical Gain (hFE) (Min): 30 @ 250mA, 1V
Maximum Power Dissipation: 25W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 2087-JAN2N3740 205724-JAN2N3740
Product Name Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - JAN2N3740
IC(max) 4000 milliamps
VCEO 60 volts
VCBO 60 volts
PD 25000 milliwatts
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