Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - JAN2N3740 JAN2N3740

Manufacturer: Microsemi Corporation
Win Source Part Number: 205724-JAN2N3740
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 200°C (TJ)
Case / Package: TO-66 (TO-213AA)
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 600mV @ 125mA, 1A
Collector Cut-off Current(Max): 10μA
Typical Gain (hFE) (Min): 30 @ 250mA, 1V
Maximum Power Dissipation: 25W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 1

Bipolar Transistors - BJT Power BJT Product overview: JAN2N3740 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JAN2N3740 can be used for catalog matching and distributor lookup.