Microsemi Corp. Bipolar Transistors - BJT JAN2N3737UB/TR

NPN silicon switching transistor in a TO-46 package, qualified per MIL-PRF-19500/395, with a collector-emitter voltage rating of 40 Vdc, collector current of 1.5 Adc, and total power dissipation of 0.5 W at T_A = +25°C. The device has a collector-emitter saturation voltage of 0.5 Vdc at 500 mA collector current and 50 mA base current, a base-emitter saturation voltage of 1.02 Vdc at 150 mA collector current and 15 mA base current, and a forward current transfer ratio of 40 to 150 at 500 mA collector current. Junction temperature range is -65 to +200 °C. Input capacitance is 80 pF and output capacitance is 9 pF at specified conditions. Rise time is 40 μs and turn-off time is 60 μs for a 1 A collector current pulse. The device is characterized under pulsed test conditions with 300 μs pulse width and ≤ 2% duty cycle.