Microsemi Corp. Bipolar Transistors - BJT JAN2N3735L/TR

NPN silicon switching transistor in TO-5 package, rated for a collector-emitter voltage of 40 Vdc, collector-base voltage of 75 Vdc, and collector current of 1.5 Adc. Total power dissipation is 2.9 W at TC = +25°C, derating at 16.6 mW/°C above +25°C. Operating and storage junction temperature range is -65°C to +200°C. Electrical characteristics include a forward current transfer ratio of 20 to 150, collector-emitter saturation voltage of 0.9 Vdc at 1.0 A collector current, and input capacitance of 80 pF. The device is qualified per MIL-PRF-19500/395. The "L" suffix denotes identical electrical characteristics to the non-L variant.