Microsemi Corp. Bipolar Transistors - BJT JAN2N3735/TR

NPN silicon switching transistor for high-current applications, available in TO-39 package with dimensions of 7.75 to 9.02 mm for CD, 6.10 to 6.60 mm for CH, and 9.02 to 9.40 mm for HD. Rated for a collector-emitter voltage of 40 Vdc, collector-base voltage of 75 Vdc, and emitter-base voltage of 5 Vdc, with a maximum collector current of 1.0 Adc and a total power dissipation of 2.9 W at T_C = +25°C. The device operates from -65°C to +200°C junction temperature and meets MIL-PRF-19500/395 qualification standards. Electrical characteristics include a forward current transfer ratio (h_FE) of 40 to 150 at I_C = 500 mA and V_CE = 1.0 V, collector-emitter saturation voltage of 0.5 V at I_C = 500 mA and I_B = 50 mA, and input capacitance of 80 pF. Lead 3 is electrically connected to the case.