Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - JAN2N3700 JAN2N3700

Manufacturer: Microsemi Corporation
Win Source Part Number: 811446-JAN2N3700
Packaging: Bulk
Mounting Style: Through Hole
Power - Max: 500mW
Transistor Type: NPN
Supplier Device Package: TO-18
Temperature Range - Operating: -65°C ~ 200°C
Manufacturer Package: TO-206AA, TO-18-3 Metal Can
Current - Collector (Ic) (Maximum): 1A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Current - Collector Cutoff (Maximum): 10nA
Popularity: Medium
Fake Threat In the Open Market: 81 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 500mV at 50mA, 500mA
DC Current Gain (hFE) (Min) at Ic, Vce: 50 at 500mA, 10V

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN Product overview: JAN2N3700 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 80V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 80V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JAN2N3700 can be used for catalog matching and distributor lookup.