Microsemi Corp. Bipolar Transistors - BJT Jan2N3700/TR

The JAN2N3700/TR is a low-power NPN silicon transistor in a hermetically sealed TO-18 (TO-206AA) metal package, designed for high-reliability military applications. It has a collector-emitter voltage rating of 80 V, a collector current of 1.0 A, and a total power dissipation of 0.5 W at 25 °C. The device is military qualified per MIL-PRF-19500/391, with a junction and storage temperature range of -65 to +200 °C. It is RoHS compliant with a lead-free finish and meets JEDEC registration standards. Thermal impedance from junction-to-ambient is 325 °C/W, and junction-to-case is 150 °C/W. The case is nickel-plated kovar with gold-plated terminals and weighs approximately 0.3 grams.