Microsemi Corp. Bipolar Transistors - BJT JAN2N3637UB/TR

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Bipolar Transistors - BJT BJTs
Description
Bipolar Transistors - BJT BJTs
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The JAN2N3637UB/TR is a PNP silicon switching transistor in a surface-mount TO-39 package with dimensions specified for the UB variant, including a lead length of at least 0.500 inch and at most 0.750 inch. It has a collector-emitter voltage rating of 175 Vdc, a collector current of 1.0 Adc, and a total power dissipation of 1.5 W at +25°C. The device operates over a junction temperature range of -65°C to +200°C and meets MIL-PRF-19500/357 qualification standards.

Datasheet Summary
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The JAN2N3637UB/TR is a PNP silicon switching transistor in a surface-mount TO-39 package with dimensions specified for the UB variant, including a lead length of at least 0.500 inch and at most 0.750 inch. It has a collector-emitter voltage rating of 175 Vdc, a collector current of 1.0 Adc, and a total power dissipation of 1.5 W at +25°C. The device operates over a junction temperature range of -65°C to +200°C and meets MIL-PRF-19500/357 qualification standards.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
JAN2N3637UB/TR
Bipolar Transistors - BJT JAN2N3637UB/TR
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number JAN2N3637UB/TR
Product Name Bipolar Transistors - BJT
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