PNP silicon switching transistor for high-voltage applications, available in TO-5 package with a lead length of 1.500 to 1.750 inches, conforming to MIL-PRF-19500/357 qualification. Features a collector-emitter voltage rating of 175 Vdc, collector current of 1.0 Adc, and power dissipation of 1.0 W at +25°C. Operating and storage junction temperature ranges from -65 to +200°C. Forward current transfer ratio (hFE) ranges from 60 to 300 at 50 mA collector current. Belongs to the 2N3634L through 2N3637L series, with electrical characteristics identical to non-L variants.
Bipolar Transistors - BJT
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | Jan2N3637L/TR |
| Product Name | Bipolar Transistors - BJT |
