Microsemi Corp. Bipolar Transistors - BJT Jan2N3637/TR

PNP silicon switching transistor for high-voltage applications, available in TO-39 and TO-5 packages with a maximum collector-emitter voltage of 175 Vdc and a collector current of 1.0 Adc. The device has a power dissipation of 1.0 W for TO-5 packages and 5.0 W for TO-39 packages, with an operating and storage junction temperature range of -65 to +200°C. It is qualified per MIL-PRF-19500/357 and meets JANTX grade requirements. Forward current transfer ratio ranges from 60 to 300 depending on bias conditions, with a collector-emitter saturation voltage of up to 0.6 Vdc at 50 mA collector current and 5 mA base current.