Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - JAN2N3507 JAN2N3507

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 120795-JAN2N3507 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-39 (TO-205AD) Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 1.5V @ 250mA, 2.5A Typical Gain (hFE) (Min): 30 @ 1.5A, 2V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Quantity per package: 1
  • TRANSISTORS - Transistors (BJT) - Single - JAN2N3507 - 120795-JAN2N3507 - Win Source Electronics
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 120795-JAN2N3507 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-39 (TO-205AD) Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 1.5V @ 250mA, 2.5A Typical Gain (hFE) (Min): 30 @ 1.5A, 2V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Quantity per package: 1
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TRANSISTORS - Transistors (BJT) - Single - JAN2N3507 - 120795-JAN2N3507 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - JAN2N3507
120795-JAN2N3507
TRANSISTORS - Transistors (BJT) - Single - JAN2N3507 120795-JAN2N3507
Manufacturer: Microsemi Corporation Win Source Part Number: 120795-JAN2N3507 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-39 (TO-205AD) Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 1.5V @ 250mA, 2.5A Typical Gain (hFE) (Min): 30 @ 1.5A, 2V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 120795-JAN2N3507
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 200°C (TJ)
Case / Package: TO-39 (TO-205AD)
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 1.5V @ 250mA, 2.5A
Typical Gain (hFE) (Min): 30 @ 1.5A, 2V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
Quantity per package: 1

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VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors
Product Number 120795-JAN2N3507 JAN2N3507
Product Name TRANSISTORS - Transistors (BJT) - Single - JAN2N3507 Bipolar Transistors - BJT
Polarity NPN; NPN
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