Microsemi Corp. Bipolar Transistors - BJT JAN2N3501UB/TR

The JAN2N3501UB/TR is a radiation-hardened, NPN silicon switching transistor in a low-profile ceramic U4 surface-mount package, compliant with MIL-PRF-19500/366 at the JAN reliability level. It has a collector-emitter voltage rating of 150 V, a collector current of 300 mA, and a total power dissipation of 1.5 W at 25°C. Thermal resistance is 90°C/W from junction to solder pad and 325°C/W from junction to ambient. The transistor features a forward-current transfer ratio of 20 to 300 depending on collector current, a collector-emitter saturation voltage of 0.2 to 0.4 V, and an output capacitance of 8.0 pF at 10 V. It is RoHS compliant, weighs less than 0.04 grams, and is qualified for military and high-reliability applications. The package has gold-plated terminals, a Kovar lid, and pin assignments for base, emitter, collector, and shielded lid connection.