Microsemi Corp. Bipolar Transistors - BJT Jan2N3501L/TR

The Jan2N3501L/TR is a military-qualified NPN silicon transistor from the 2N3498L through 2N3501L series, designed for high-reliability and medium-power applications requiring high-frequency switching. It is packaged in a TO-5 hermetically sealed case with kovar base and nickel-plated leads, weighing approximately 1.14 grams. The device has a collector-emitter voltage rating of 150 V, a collector-base voltage of 150 V, an emitter-base voltage of 6.0 V, and a maximum collector current of 300 mA. Its thermal resistance is 30 °C/W junction-to-case and 175 °C/W junction-to-ambient. Minimum current gain (hFE) is 20 at 500 mA collector current, and collector-emitter saturation voltage is 0.6 V at 300 mA collector and 30 mA base current. It operates from -65 to +200 °C and is qualified per MIL-PRF-19500/366 for JAN, JANTX, JANTXV, and JANS reliability levels.