Microsemi Corp. Bipolar Transistors - BJT Jan2N3500/TR

The Jan2N3500/TR is a military-qualified NPN silicon transistor from the 2N3498 through 2N3501 series, designed for high-reliability and medium-power applications requiring high-frequency switching. It is available in a TO-39 (TO-205AD) package, with a hermetically sealed kovar base and nickel cap, and weighs approximately 1.064 grams. The part has a collector-emitter voltage rating of 150 V, a collector-base voltage of 150 V, and a continuous collector current of 300 mA. It meets MIL-PRF-19500/366 qualification levels for JAN, JANTX, JANTXV, and JANS reliability grades. Thermal resistance from junction-to-case is 30 °C/W, and junction temperature ranges from -65 to +200 °C. The forward current transfer ratio (hFE) at 150 mA and 10 V collector-emitter voltage is 15 to 120. Collector-emitter saturation voltage is 0.4 V at 150 mA collector current and 15 mA base current.