Microsemi Corp. Bipolar Transistors - BJT Jan2N3499L/TR

The JAN2N3499L/TR is a military-qualified NPN silicon transistor from the 2N3498L thru 2N3501L series, designed for high-reliability and medium-power general-purpose applications requiring high-frequency switching. It is housed in a hermetically sealed TO-5 package with a kovar base and nickel cap, weighing approximately 1.14 grams. The device has a collector-emitter voltage rating of 100 V and a collector current rating of 500 mA. Thermal resistance from junction-to-ambient is 175 °C/W, and junction-to-case is 30 °C/W. Operating and storage junction temperature ranges from -65 °C to +200 °C. It meets MIL-PRF-19500/366 qualification standards and is RoHS compliant in its commercial grade variant. The part is designed for surface mount and leaded configurations, with a forward current gain (hFE) of 35 to 75 at 10 mA collector current and a collector-emitter saturation voltage of 0.2 V at 10 mA collector current and 1 mA base current.