Microsemi Corp. Bipolar Transistors - BJT Jan2N3499/TR

The Jan2N3499/TR is an NPN silicon transistor from the 2N3498-2N3501 series, designed for high-reliability military and medium-power applications. It is housed in a hermetically sealed TO-39 package (7.75-8.51 mm diameter, 6.10-6.60 mm height) with long leads (12.7-19.1 mm). It has a 100 V collector-emitter voltage, 500 mA collector current, and 1.5 W power dissipation at 25 °C. Thermal resistance is 175 °C/W junction-to-ambient. The forward current gain (hFE) ranges from 35 to 75 at 10 mA collector current, with a collector-emitter saturation voltage of 0.2 V at 10 mA and 1 mA base current. The junction operates from -65 °C to +200 °C. It meets MIL-PRF-19500/366 standards for JAN, JANTX, JANTXV, and JANS levels, with a kovar package and nickel-plated solder-dip leads.