Microsemi Corp. Bipolar Transistors - BJT JAN2N3498L/TR

The JAN2N3498L/TR is a military-qualified NPN silicon transistor for high-reliability applications, available in a TO-5 package. It has a collector-emitter voltage rating of 100 V, a collector-base voltage rating of 100 V, and a maximum collector current of 500 mA. The device has a thermal resistance junction-to-ambient of 175 °C/W and a junction temperature range of -65 to +200 °C. It is hermetically sealed with a kovar base and nickel cap, with kovar leads plated and finished in solder dip. The forward current transfer ratio at 150 mA collector current and 10 V collector-emitter voltage is minimum 40 and maximum 120. The collector-emitter saturation voltage is 0.2 V at 10 mA collector current and 1 mA base current. The package weight is approximately 1.14 grams. RoHS compliance is not applicable to this JAN-qualified version.