Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - JAN2N3440 JAN2N3440

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1191386-JAN2N3440 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 250V Current - Collector Cutoff (Maximum): 2μA Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 500mV at 4mA, 50mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 40 at 20mA, 10V Maximum Power: 800mW
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1191386-JAN2N3440 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 250V Current - Collector Cutoff (Maximum): 2μA Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 500mV at 4mA, 50mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 40 at 20mA, 10V Maximum Power: 800mW
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TRANSISTORS - Transistors (BJT) - Single - JAN2N3440 - 1191386-JAN2N3440 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - JAN2N3440
1191386-JAN2N3440
TRANSISTORS - Transistors (BJT) - Single - JAN2N3440 1191386-JAN2N3440
Manufacturer: Microsemi Corporation Win Source Part Number: 1191386-JAN2N3440 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 250V Current - Collector Cutoff (Maximum): 2μA Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 500mV at 4mA, 50mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 40 at 20mA, 10V Maximum Power: 800mW

Manufacturer: Microsemi Corporation
Win Source Part Number: 1191386-JAN2N3440
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: NPN
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-39
Temperature Range - Operating: -65°C ~ 200°C
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-205AD, TO-39-3 Metal Can
Current - Collector (Ic) (Maximum): 1A
Voltage - Collector Emitter Breakdown (Maximum): 250V
Current - Collector Cutoff (Maximum): 2μA
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 500mV at 4mA, 50mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 40 at 20mA, 10V
Maximum Power: 800mW

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Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 1191386-JAN2N3440
Product Name TRANSISTORS - Transistors (BJT) - Single - JAN2N3440
Polarity NPN
Package Type TO-3; TO-39; SOT3
Packing Method Bulk; Bulk
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