Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - JAN2N3439 JAN2N3439

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 133930-JAN2N3439 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-39 (TO-205AD) Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 350V Max Vce (sat): 500mV @ 4mA, 50mA Collector Cut-off Current(Max): 2μA Typical Gain (hFE) (Min): 40 @ 20mA, 10V Maximum Power Dissipation: 800mW Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 133930-JAN2N3439 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-39 (TO-205AD) Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 350V Max Vce (sat): 500mV @ 4mA, 50mA Collector Cut-off Current(Max): 2μA Typical Gain (hFE) (Min): 40 @ 20mA, 10V Maximum Power Dissipation: 800mW Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Quantity per package: 1
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Suppliers

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TRANSISTORS - Transistors (BJT) - Single - JAN2N3439 - 133930-JAN2N3439 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - JAN2N3439
133930-JAN2N3439
TRANSISTORS - Transistors (BJT) - Single - JAN2N3439 133930-JAN2N3439
Manufacturer: Microsemi Corporation Win Source Part Number: 133930-JAN2N3439 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-39 (TO-205AD) Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 350V Max Vce (sat): 500mV @ 4mA, 50mA Collector Cut-off Current(Max): 2μA Typical Gain (hFE) (Min): 40 @ 20mA, 10V Maximum Power Dissipation: 800mW Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 133930-JAN2N3439
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 200°C (TJ)
Case / Package: TO-39 (TO-205AD)
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 350V
Max Vce (sat): 500mV @ 4mA, 50mA
Collector Cut-off Current(Max): 2μA
Typical Gain (hFE) (Min): 40 @ 20mA, 10V
Maximum Power Dissipation: 800mW
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors
Product Number 133930-JAN2N3439 JAN2N3439
Product Name TRANSISTORS - Transistors (BJT) - Single - JAN2N3439 Bipolar Transistors - BJT
Polarity NPN; NPN
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