Microsemi Corp. 1A 80V Bipolar Transistor JAN2N3019

Description
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN Product overview: JAN2N3019 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 80V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 80V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JAN2N3019 can be used for catalog matching and distributor lookup.
  • TRANSISTORS - Transistors (BJT) - Single - JAN2N3019 - 1191383-JAN2N3019 - Win Source Electronics
    Win Source Electronics
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Description
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN Product overview: JAN2N3019 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 80V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 80V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JAN2N3019 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
1A 80V Bipolar Transistor
2087-JAN2N3019
1A 80V Bipolar Transistor 2087-JAN2N3019
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN Product overview: JAN2N3019 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 80V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 80V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JAN2N3019 can be used for catalog matching and distributor lookup.

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN Product overview: JAN2N3019 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 80V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 80V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JAN2N3019 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - JAN2N3019 - 1191383-JAN2N3019 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - JAN2N3019
1191383-JAN2N3019
TRANSISTORS - Transistors (BJT) - Single - JAN2N3019 1191383-JAN2N3019
Manufacturer: Microsemi Corporation Win Source Part Number: 1191383-JAN2N3019 Series: Military, MIL-PRF-19500/391 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-205AD, TO-39-3 Metal Can Power - Max: 800mW Transistor Type: NPN Family Name: 2N3019 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.microsemi.com RoHS State: Request Verification Manufacturer Package: TO-39 Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 80V Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Maximum): 10μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 500mA, 10V Introduction Date: November 29, 2010 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited Application Field: Used in Industrial Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 1191383-JAN2N3019
Series: Military, MIL-PRF-19500/391
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 200°C (TJ)
Package: TO-205AD, TO-39-3 Metal Can
Power - Max: 800mW
Transistor Type: NPN
Family Name: 2N3019
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.microsemi.com
RoHS State: Request Verification
Manufacturer Package: TO-39
Current - Collector (Ic) (Maximum): 1A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Maximum): 10μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 500mA, 10V
Introduction Date: November 29, 2010
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2026
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial
Quantity per package: 1

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors RF Transistors
Product Number 2087-JAN2N3019 1191383-JAN2N3019
Product Name 1A 80V Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - JAN2N3019
IC(max) 1000 milliamps
VCEO 80 volts
VCBO 140 volts
PD 800 milliwatts
TJ -65 C (-85 F) -65 to 200 C (-85 to 392 F)
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