JAN2N2907AUB is a PNP silicon small signal transistor in a surface mount TO-206AA 3-pin package, rated for a collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and power dissipation of 1.16 W at TC = +25°C. It operates over a junction temperature range from -65°C to +200°C. The device qualifies under JANS requirements per MIL-PRF-19500/291. Forward current gain hFE ranges from 40 to 450 depending on collector current. Collector-emitter saturation voltage is up to 1.6 V at 500 mA collector current and 50 mA base current. Base-emitter saturation voltage reaches 2.6 V under the same conditions. Input capacitance is 30 pF, and output capacitance is 8.0 pF. Turn-on time is 45 μs and turn-off time is 300 μs under specified conditions.
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SURFACE MOUNT PACKAGE-3 Product overview: JAN2N2907AUB from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 0.6A, 60V. Search-friendly keywords include transistor, BJT, switching, amplification, SMD, 0.6A, 60V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JAN2N2907AUB can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JAN2N2907AUB |
| Product Name | SMD 0.6A 60V Bipolar Transistor |
| Polarity | PNP |
