Microsemi Corp. Bipolar Transistors - BJT Jan2N2907AUB/TR

PNP silicon signal transistor in a TO-18 package, rated for 60 V collector-emitter voltage, 600 mA collector current, and 500 mW power dissipation at 25°C, with an operating junction temperature range of -65°C to +200°C. The device meets MIL-PRF-19500/291 qualification standards and is available in high-reliability configurations including JANTX, JANTXV, and JANS grades. The 3-lead TO-18 case has a body diameter of 0.195 inches and overall height up to 0.230 inches, with collector internally connected to the case.