PNP silicon small signal transistor in a TO-18 package with a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. Operating and storage junction temperature range is -65 to +200°C. The device is qualified per MIL-PRF-19500/291 and has a forward current transfer ratio (hFE) of 100 to 450 at 1.0 mA collector current and 10 V collector-emitter voltage. Includes turn-on time of 45 μs and turn-off time of 300 μs. The JANTXV-grade variant features a ceramic lid with a 4-pin surface mount configuration, where pin 4 is connected to the lid.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | Jan2N2907AUA/TR |
| Product Name | Bipolar Transistors - BJT |
