Microsemi Corp. Bipolar Transistors - BJT Jan2N2907AL

The Jan2N2907AL is a PNP silicon small signal transistor in a TO-18 package, designed for general-purpose amplification and switching applications. It has a collector-emitter voltage rating of 60 Vdc, a collector current rating of 600 mAdc, and a total power dissipation of 0.5 W at 25 °C. The device operates within a junction temperature range of -65 °C to +200 °C. The forward current transfer ratio (hFE) ranges from 100 to 300 at a collector current of 150 mA and collector-emitter voltage of 10 V. Collector-emitter saturation voltage is 0.4 V at 150 mA collector current and 15 mA base current. The transistor is qualified to MIL-PRF-19500/291. Its physical dimensions conform to the TO-18 (TO-206AA) standard, with a case height of 0.170 to 0.210 inches and a lead length of 0.500 to 0.750 inches.