Microsemi Corp. Bipolar Transistors - BJT Jan2N2907AL/TR

PNP small signal silicon transistor in TO-18 package, rated for 60 V collector-emitter voltage, 600 mA collector current, and 0.5 W power dissipation at 25°C, with operating and storage junction temperatures from -65°C to +200°C. The device meets MIL-PRF-19500/291 qualification standards and has a forward current transfer ratio (hFE) ranging from 100 to 450 depending on bias conditions. Switching times are 45 μs turn-on and 300 μs turn-off under specified conditions.