Microsemi Corp. Bipolar Transistors - BJT Jan2N2907A

The JAN2N2907A is a PNP small signal silicon transistor qualified to MIL-PRF-19500/291, intended for general-purpose switching and amplification applications. It is packaged in a TO-18 (TO-206AA) metal case with a height of 0.230 inch and a base diameter of 0.195 inch. The device has a collector-emitter voltage rating of 60 Vdc, a collector current rating of 600 mAdc, and a total power dissipation of 0.5 W at 25°C. The operating and storage junction temperature range is -65°C to +200°C. The forward current transfer ratio (hFE) ranges from 75 to 450 at 1.0 mA collector current and 10 V collector-emitter voltage. The collector-emitter saturation voltage is 0.4 V at 150 mA collector current and 15 mA base current. It meets MIL-PRF-19500/291 qualification requirements and is constructed with a metallized case internally connected to the collector terminal.