Microsemi Corp. Bipolar Transistors - BJT Jan2N2907A/TR

PNP silicon transistor in TO-18 package for switching and amplification applications, with a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. Operating and storage junction temperature ranges from -65°C to +200°C. Qualified to MIL-PRF-19500/291. Current gain (hFE) ranges from 75 to 450 depending on collector current. Collector-emitter saturation voltage is 0.4 V at 150 mA collector and base current. Turn-on time is 45 μs and turn-off time is 300 μs under specified conditions.