Microsemi Corp. Bipolar Transistors - BJT Jan2N2906AUA

The JAN2N2906AUA is a PNP small signal silicon transistor in a surface mount package with a ceramic lid, qualified to MIL-PRF-19500/291. It has a collector-emitter voltage rating of 60 Vdc, a collector current of 600 mAdc, and a total power dissipation of 0.5 W at 25°C. The operating and storage junction temperature range is -65 to +200°C. The device has a minimum current gain (hFE) of 40 at 10 mA collector current and 10 V collector-emitter voltage. Its Collector-Emitter Saturation Voltage is 0.4 Vdc at 150 mA collector and 15 mA base current. The output capacitance is 8.0 pF and input capacitance is 30 pF. The turn-on time is 45 μs and turn-off time is 300 μs. The pinout is emitter, base, collector with the case connected to the collector. Package dimensions conform to the UA surface mount configuration.