Microsemi Corp. Bipolar Transistors - BJT Jan2N2906AUA/TR

The Jan2N2906AUA/TR is a PNP small signal silicon transistor in a TO-18 package, rated for a collector-emitter voltage of 60 Vdc and a collector current of 600 mAdc, with a total power dissipation of 0.5 W at 25°C. It operates over a junction temperature range of -65 to +200°C. The device meets MIL-PRF-19500/291 qualification and features a forward current transfer ratio hFE of 40 to 175 at IC=1.0 mA and VCE=10 V. Input capacitance is 30 pF, output capacitance is 8.0 pF, turn-on time is 45 μs, and turn-off time is 300 μs. The case is internally connected to the collector terminal.