Microsemi Corp. Bipolar Transistors - BJT Jan2N2906A

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Bipolar Transistors - BJT BJTs
Description
Bipolar Transistors - BJT BJTs
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PNP small signal silicon transistor in TO-18 (TO-206AA) package, rated for a collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. Operating and storage junction temperature range is -65 to +200°C. Qualified per MIL-PRF-19500/291. Forward current transfer ratio ranges from 40 to 175 depending on collector current and variant. Collector-emitter saturation voltage is 0.4 V at 150 mA collector and 15 mA base current. Turn-on time is 45 μs and turn-off time is 300 μs under specified switching conditions.

Datasheet Summary
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PNP small signal silicon transistor in TO-18 (TO-206AA) package, rated for a collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. Operating and storage junction temperature range is -65 to +200°C. Qualified per MIL-PRF-19500/291. Forward current transfer ratio ranges from 40 to 175 depending on collector current and variant. Collector-emitter saturation voltage is 0.4 V at 150 mA collector and 15 mA base current. Turn-on time is 45 μs and turn-off time is 300 μs under specified switching conditions.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
Jan2N2906A
Bipolar Transistors - BJT Jan2N2906A
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number Jan2N2906A
Product Name Bipolar Transistors - BJT
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