Microsemi Corp. Bipolar Transistors - BJT Jan2N2906A/TR

The JAN2N2906A/TR is a PNP small signal silicon transistor in a TO-18 package, designed for general-purpose switching and amplification applications. It has a collector-emitter voltage rating of 60 Vdc, a collector current rating of 600 mAdc, and a total power dissipation of 0.5 W at 25°C. The operating and storage junction temperature range is -65 to +200°C. The transistor meets MIL-PRF-19500/291 qualification standards. Its forward current transfer ratio (hFE) ranges from 40 to 175 depending on collector current, with a collector-emitter saturation voltage of 0.4 V at 150 mA collector and 15 mA base current. The device is available in tape and reel packaging.