Microsemi Corp. Bipolar Transistors - BJT Jan2N2905AL/TR

The Jan2N2905AL/TR is a PNP silicon switching transistor in a TO-39 (TO-205AD) package, designed for high-reliability military and general-purpose switching applications. It is hermetically sealed with a kovar base and nickel cap, and meets MIL-PRF-19500/290 qualifications up to the JAN level. Maximum ratings include a collector-emitter voltage of 60 V, collector current of 600 mA, and total power dissipation of 0.8 W at 25 °C. The device has a thermal resistance junction-to-case of 50 °C/W and operates across a junction temperature range of -65 to +200 °C. The forward current transfer ratio (hFE) ranges from 100 to 450 at 1 mA collector current and 10 V collector-emitter voltage. Switching characteristics include a turn-on time of 45 ns and turn-off time of 300 ns. RoHS compliance is not applicable to JAN-level devices.