Microsemi Corp. Bipolar Transistors - BJT Jan2N2905A

The Jan2N2905A is a PNP silicon switching transistor in a TO-39 (TO-205AD) hermetically sealed package with a kovar base and nickel cap, weighing approximately 1.064 grams. It has a collector-emitter voltage rating of 60 V, a collector current of 600 mA, and a total power dissipation of 0.8 W at 25°C ambient temperature. The thermal resistance junction-to-ambient is 195 °C/W, and junction temperature ranges from -65 to +200 °C. It meets MIL-PRF-19500/290 qualifications for JAN level reliability and is designed for high-reliability and military applications. Switching times are 45 ns turn-on and 300 ns turn-off. The device is available in non-RoHS compliant versions.