Microsemi Corp. Bipolar Transistors - BJT Jan2N2905/TR

The Jan2N2905/TR is a PNP silicon switching transistor in a TO-39 (TO-205AD) package, rated for a collector-emitter voltage of 40 V and a collector current of 600 mA. It features a thermal resistance junction-to-ambient of 195 °C/W and operates over a junction temperature range of -65 to +200 °C. The device is military qualified per MIL-PRF-19500/290 and housed in a hermetically sealed kovar base with nickel cap and solder-dip plated leads. It complies with RoHS for commercial variants only. Typical current gain (hFE) ranges from 35 to 75 at IC = 10 mA and VCE = 10 V. Switching times are 45 ns turn-on and 300 ns turn-off. Collector-emitter saturation voltage is 0.4 V at IC = 150 mA and IB = 15 mA.