Microsemi Corp. Bipolar Transistors - BJT Jan2N2904AL/TR

The Jan2N2904AL/TR is a PNP silicon switching transistor in a TO-39 package, designed for high-reliability and military applications. It has a collector-emitter voltage rating of 60 V, a collector current rating of 600 mA, and a total power dissipation of 0.8 W at 25 °C. The device operates over a junction temperature range of -65 °C to +200 °C, with a thermal resistance junction-to-case of 50 °C/W and junction-to-ambient of 195 °C/W. The transistor is qualified to MIL-PRF-19500/290 standards at the JAN level, features a hermetically sealed kovar base with a nickel cap, and has a weight of approximately 1.14 grams. The base-emitter saturation voltage is 1.3 V at a collector current of 150 mA and base current of 15 mA, with a collector-emitter saturation voltage of 0.4 V under the same conditions. Forward current gain ranges from 40 to 175 depending on collector current.